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- W159645025 abstract "Strained, modulation-doped InGaSb/AlGaSb quantum wells were grown on InP substrates by molecular beam epitaxy and characterized by magneto-transport measurements. Hole transport properties were strongly correlated with growth conditions. Shubnikov-de Haas measurements yielded a hole mass of (0.15{plus minus}0.02) m{sub o}, and hole mobilities as high as 3300 cm{sub 2}/Vs were obtained at 77K, with a density of 1.6{times}10{sub 12} cm{sup {minus}2}, thus showing promise for p-type field-effect transistor applications. 9 refs., 4 figs." @default.
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- W159645025 date "1991-01-01" @default.
- W159645025 modified "2023-09-24" @default.
- W159645025 title "Strained quantum well InGaSb/AlGaSb heterostructures grown by molecular beam epitaxy" @default.
- W159645025 hasPublicationYear "1991" @default.
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