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• W1596456386 abstract "ABSTRACT Cerium-doped Bi3.25La0.75Ti3O12 (BLT) thin films were formed by depositing sol-gel solutions on Pt/Ti/SiO2/Si (100) structures. Partial replacement of La3+ by Ce3+ modified the lattice ordering but maintained bismuth-layered structure. The Ce4+ doping in BLT up to 5% of Ti atoms did not affect the single phase bismuth-layered structure but small modification was observed in structural orientation, which influenced the microstructure and ferroelectric properties of BLT films. Partial replacement of La3+ by Ce3+ decreased the remanent polarization but small (about 1% of Ti atoms) Ce4+ substitution enhanced the remanent polarization by about 20% in BLT films as well as it showed fatigueless response up to 1010 switching cycles. The control of oxygen vacancies (defect engineering) influences the ferroelectric fatigue in the BLT films dramatically." @default.
• W1596456386 created "2016-06-24" @default.
• W1596456386 creator A5046750213 @default.
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• W1596456386 date "2006-11-01" @default.
• W1596456386 modified "2023-10-18" @default.
• W1596456386 title "DEFECT ENGINEERING FOR CONTROL OF POLARIZATION FATIGUE IN Bi3.25La0.75Ti3O12THIN FILM CAPACITORS" @default.
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• W1596456386 doi "https://doi.org/10.1080/10584580600657203" @default.
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