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- W1597217361 abstract "We report a unique, CMOS approach for the inclusion of size-tunable (7-50-nm), spherical Ge quantum dots (QDs) into gate stacks of Si MOS transistors, through selective oxidation of SiGe pillars over the buffer layer of Si3N4 on top of the Si substrate. The Ge-QD MOS phototransistors feature extremely low dark current densities (I off ∼ 0.27 pA/μm2), high I on /I off (>106), steep subthreshold swing (∼175 mV/dec at 300 K), superior external quantum efficiency (∼240%), and fast response time of 1.4ns under illumination of 850 nm, providing a core building block for high-performance Ge optical transducers for on-chip optical switches and transducers for Si-based optical interconnect applications. Most importantly, the detection wavelength of the Ge QD is tunable from near infrared to near ultraviolet by reducing the QD size from 50 to 7 nm, and the optimal photoresponsivity is tailored by the Ge QD size and the effective thickness of gate dielectrics." @default.
- W1597217361 created "2016-06-24" @default.
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- W1597217361 date "2015-04-01" @default.
- W1597217361 modified "2023-09-24" @default.
- W1597217361 title "Size tunable Ge quantum dot phototrasnsistors for optical interconnects with high figure of merits" @default.
- W1597217361 doi "https://doi.org/10.1109/vlsi-tsa.2015.7117552" @default.
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