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- W1598812856 abstract "The passivation with molecular hydrogen in the range 213–234°C of the interfacial Pb0 and Pb1 defects in (100)SiSiO2, thermally grown at low temperature (<750°C), has been analyzed by K-band electron spin resonance. The passivation kinetics are found to be well described by the same defect-H2 reaction limited model applying to the interfacial Pb defect (∘SiSi3) in (111)SiSiO2 grown at 850°C. However, unlike Pb, that was typified by a single-valued activation energy for passivation Ea = 1.66 eV, both Pb0 and Pb1 are found to exhibit a Gaussian spread σEa ∼ 0.15 eV around their respective mean Ea values, deduced as 1.51 and 1.57 ± 0.3 eV. The similar passivation kinetics are in line with assigning the Pb0 and Pb1 defects, like Pb, to an interfacial unpaired sp3 Si hybrid. However, as there is no fundamental difference between Pb0 and Pb1 regarding passivation in H2, more specfic identification of Pb with either Pb0 or Pb1, if any, cannot be concluded." @default.
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- W1598812856 date "1996-01-01" @default.
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- W1598812856 title "Comparative analysis of the H2 passivation of interface defects at the interface using electron spin resonance" @default.
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- W1598812856 doi "https://doi.org/10.1016/0038-1098(95)00535-8" @default.
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