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• W1600185984 abstract "It has recently been postulated that GaN high electron mobility transistors under high voltage stress degrade as a result of defect formation induced by excessive mechanical stress that is introduced through the inverse piezoelectric effect. This mechanism is characterized by a critical voltage beyond which irreversible degradation takes place. We have built a firstorder model for the critical voltage for degradation of GaN HEMTs. In our model, electrical degradation occurs when the elastic energy stored in the AlGaN barrier exceeds a critical value. When using estimations of this critical elastic energy that come from epitaxial studies of strain relaxation in Al-GaN/GaN heterostructures, our proposed model yields predictions for the critical voltage that match experimental observations." @default.
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• W1600185984 date "2009-11-06" @default.
• W1600185984 modified "2023-09-28" @default.
• W1600185984 title "A model for the critical voltage for electrical degradation of GaN high electron mobility transistors" @default.
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