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• W1601492715 abstract "We have studied the growth of epitaxial La2Zr2O7 thin films on (111) Si. Although the interface structure can be strongly affected by the Si oxidation during the deposition process, epitaxial growth of La2Zr2O7 was obtained. A detailed study by means of transmission electron microscopy reveals two types of structures (pyrochlore and fluorite) with the same average chemical composition but strong differences in reactivity and interface formation. The structural complexity of the ordered pyrochlore structure seems to prevent excess oxygen diffusion and interfacial SiO2 formation." @default.
• W1601492715 created "2016-06-24" @default.
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• W1601492715 date "2003-12-22" @default.
• W1601492715 modified "2023-10-01" @default.
• W1601492715 title "Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si" @default.
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• W1601492715 doi "https://doi.org/10.1063/1.1635966" @default.
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