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• W1602165636 abstract "We introduce a method for the controlled construction of oxygen vacancy profiles within the conducting filaments of TaOx resistive switching devices, with spatial resolutions approaching the sub-nanometer scale. We identify controllable power signatures in the resistive switching curves of memristive devices, and using analytical and numerical models demonstrate they are consistent with specific, designable radial vacancy profiles within the conducting filaments resulting from high-order hysteresis. The design of radial vacancy profiles is shown to address important technological challenges in memristive systems such as controlled state writing, half-select errors, and designed retention." @default.
• W1602165636 created "2016-06-24" @default.
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• W1602165636 date "2015-07-20" @default.
• W1602165636 modified "2023-09-25" @default.
• W1602165636 title "Power signatures and vacancy profile control in nanoscale memristive filaments" @default.
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• W1602165636 doi "https://doi.org/10.1063/1.4927211" @default.
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