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- W160398415 abstract "This chapter discusses plasma-enhanced chemical vapor deposition (PECVD) of dielectrics. Chemically reactive, low-pressure glow discharge plasmas have been used to form a number of coating materials employed in microelectronics and other applications. The key advantage of plasma-assisted reactions is that they can occur at temperatures that are usually considerably lower than are possible with thermal reactions alone. As a result, it is possible to deposit or grow films on substrates that might not have the thermal stability to accept such coatings. It has been shown that PECVD reactions typically produce nonstoichiometric films that may or may not be advantageous in terms of physical and/or chemical properties, depending on the applications contemplated. The lower deposition temperatures for PECVD dielectric films have, thus, far been the major driving forces for their use." @default.
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- W160398415 date "1984-01-01" @default.
- W160398415 modified "2023-09-26" @default.
- W160398415 title "Plasma-Enhanced Chemical Vapor Deposition of Dielectrics" @default.
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- W160398415 doi "https://doi.org/10.1016/b978-0-12-234108-3.50009-1" @default.
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