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- W1604143044 abstract "In this paper, lasing in semiconductor micro-stadiums of various aspect ratio is studied to find out how the cavity shape affects the lasing frequency and threshold. The sample investigated contains a thin InAs quantum well between two 100 nm GaAs cladding layers. Numerical simulation using the finite-difference time-domain (FDTD) method are carried out." @default.
- W1604143044 created "2016-06-24" @default.
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- W1604143044 date "2006-01-18" @default.
- W1604143044 modified "2023-09-27" @default.
- W1604143044 title "Optimization of lasing in semiconductor micro -stadiums" @default.
- W1604143044 doi "https://doi.org/10.1109/eqec.2005.1567528" @default.
- W1604143044 hasPublicationYear "2006" @default.
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