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- W1605416341 abstract "We demonstrate the feasibility of an approach to nonvolatile memory (NVM) that exploits charge trapping at deep-energy levels formed in Al2O3 by metal doping. Our calculations show that V and Nb are expected to form such deep energy levels in the band gap of Al2O3. To demonstrate the effectiveness of this approach these metal ions were ion-implanted into test structures based on an Al2O3 trapping layer. Several structural analysis techniques and photocurrent spectroscopy show that the doped metal ions are located close to the Al2O3/SiO2 interface and exhibit characteristics consistent with some of the deep levels predicted in calculations. The resulting test devices are shown to exhibit promising NVM characteristics." @default.
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- W1605416341 date "2009-03-16" @default.
- W1605416341 modified "2023-09-22" @default.
- W1605416341 title "Nonvolatile memories using deep traps formed in Al2O3 by metal ion implantation" @default.
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- W1605416341 doi "https://doi.org/10.1063/1.3097799" @default.
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