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• W1605914749 abstract "The optical properties of AlxGa1−xN epilayers were extensively investigated by using photoluminescence, optical absorption, photocurrent, and persistent photoconductivity measurements. For the AlxGa1−xN epilayers containing high Al composition, we observed the Stokes shift, and an anomalous temperature-dependent photoluminescence and persistent photoconductivity effect. These results show a strong dependence on Al contents in AlxGa1−xN epilayers. The magnitude of the Stokes shift is close to the localization depth determined from the persistent photoconductivity decay kinetics. The increase in the degree of localized states with large Al compositions is due to alloy compositional fluctuations. Also, the S-shaped behavior and Stokes shift can be described in terms of localized states formed by alloy potential fluctuations in AlxGa1−xN epilayers." @default.
• W1605914749 created "2016-06-24" @default.
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• W1605914749 date "2004-04-01" @default.
• W1605914749 modified "2023-09-27" @default.
• W1605914749 title "Investigations on alloy potential fluctuations in AlxGa1−xN epilayers using optical characterizations" @default.
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• W1605914749 doi "https://doi.org/10.1063/1.1652256" @default.
• W1605914749 hasPublicationYear "2004" @default.
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