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- W1606280582 abstract "Phase change memory cells with monolayer chalcogenide film (Ge 2 Sb 2 Te 5 or Sb 2 Te 3 ) and double-layer chalcogenide films (Ge 2 Sb 2 Te 5 and Sb 2 Te 3 ) were successfully fabricated. Cells with double-layer chalcogenide films show the abilities of multilevel data storage and lower set threshold voltages than monolayer ones. A thermal model for reset process was applied to calculate the phase change power consumption of each cell. The cell with the structure like W/Ge2Sb2Te5/Sb 2 Te 3 /TiN/Al shows the lower power consumption and less reset time than the cell with the structure like W/Sb2Te3/Ge2Sb2Te5/TiN/Al." @default.
- W1606280582 created "2016-06-24" @default.
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- W1606280582 date "2007-01-01" @default.
- W1606280582 modified "2023-09-25" @default.
- W1606280582 title "Set and Reset Properties of Phase Change Memory Cells with Double-Layer Chalcogenide Films (Ge[sub 2]Sb[sub 2]Te[sub 5] and Sb[sub 2]Te[sub 3])" @default.
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- W1606280582 doi "https://doi.org/10.1149/1.2783777" @default.
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