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• W1606804583 abstract "All-polymer phototransistors were fabricated using both glass and flexible plastic film substrates by employing bulk heterojunction channel layers of p-type polymer (P3HT) and n-type polymer (THBT-ht). The devices could detect the entire visible light because the n-type polymer could sense photons in the deep red parts (>650 nm). The responsivity of devices was higher at the lower light intensity, while it could be controlled by varying the gate and/or drain voltages. Similar performances were measured for flexible all-polymer phototransistors with a bottom-source/drain and top-gate electrode configuration." @default.
• W1606804583 created "2016-06-24" @default.
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• W1606804583 date "2016-01-01" @default.
• W1606804583 modified "2023-10-16" @default.
• W1606804583 title "Organic Phototransistors With All-Polymer Bulk Heterojunction Layers of <i>p</i>-Type and <i>n</i>-Type Sulfur-Containing Conjugated Polymers" @default.
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• W1606804583 doi "https://doi.org/10.1109/jstqe.2015.2447538" @default.
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