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• W1607314904 abstract "Due to the effects of the Moore's law, the process variations in current technologies are increasing and have a major impact on power and performance which results in parametric yield loss. Due to this, process variability and the difficulty of modeling accurately transistor behavior impede the dimensions scaling benefits. The Fully Depleted Silicon-On-Insulator (FDSOI) technology is one of the main contenders for deep submicron devices as they can operate at low voltage with superior energy efficiency compared with bulk CMOS. In this paper, we study the static energy on 28nm FDSOI devices to implement sub-threshold circuits. Study of delay vs. static power trade-off reveals the FDSOI robustness with respect to process variations." @default.
• W1607314904 created "2016-06-24" @default.
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• W1607314904 date "2015-04-01" @default.
• W1607314904 modified "2023-09-25" @default.
• W1607314904 title "Statistical energy study for 28nm FDSOI devices" @default.
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• W1607314904 doi "https://doi.org/10.1109/eurosime.2015.7103149" @default.
• W1607314904 hasPublicationYear "2015" @default.
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