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- W1608385032 abstract "We have studied the electron stimulated desorption of F− from a monolayer of PF3Ru(0001); the ions pass through ultrathin overlayer films of Xe. Surprisingly, we find the F− yield to be 4 times higher in the presence of a Xe overlayer one monolayer thick than in the absence of Xe. This enhancement is accompanied by a dramatic change in the ion angular distribution: While F− ions desorb from PF3Ru(0001) in a hexagonal array of off-normal beams, they desorb in a broad normal distribution in the presence of a Xe overlayer. We discuss a model which attributes the increase in F− to a decrease in the neutralization probability of F− with the surface, and the change in angle to elastic scattering." @default.
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- W1608385032 date "1995-07-01" @default.
- W1608385032 modified "2023-10-18" @default.
- W1608385032 title "Depth of origin of ESD ions: enhancement of F− from upon passage through xenon overlayers" @default.
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- W1608385032 doi "https://doi.org/10.1016/0039-6028(95)80019-0" @default.
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