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• W1608669079 abstract "Proton bombardment has been used to boost the on-chip inductor quality factor and to also improve the frequency response. In this paper we demonstrated these advantages using the 0.13/spl mu/m and 0.18/spl mu/m RF CMOS processes. Based on the model, we evaluated how the performance improved using bombardment technology. A simultaneously impressive increase both in the peak Q-value and the optimal frequency have been evidenced due to its significantly reduced substrate parasitic effect as a result of higher substrate resistivity. This can be considered as a solution to integrate inductor on a Si substrate." @default.
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• W1608669079 date "2003-08-27" @default.
• W1608669079 modified "2023-10-18" @default.
• W1608669079 title "Characterization and model of high quality factor and broadband integrated inductor on Si-substrate" @default.
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• W1608669079 doi "https://doi.org/10.1109/mwsym.2003.1212604" @default.
• W1608669079 hasPublicationYear "2003" @default.
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