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• W1608726706 endingPage "084003" @default.
• W1608726706 startingPage "084003" @default.
• W1608726706 abstract "Deviation of threshold voltage and effective mobility due to random dopant fluctuation is proposed. An improved 65 nm average drain current MOS model called α law is utilized after fitting HSPICE simulating data and extracting process parameters. Then, a current mismatch model of nanoscale MOSFETs induced by random dopant fluctuation is presented based on propagation of variation theory. In test conditions, the calculated standard deviation applying this model, compared to 100 times Monte-Carlo simulation data with HSPICE, indicates that the average relative error and relative standard deviation is 0.24% and 0.22%, respectively. The results show that this mismatch model is effective to illustrate the physical mechanism, as well as being simple and accurate." @default.
• W1608726706 created "2016-06-24" @default.
• W1608726706 creator A5000183121 @default.
• W1608726706 creator A5031821249 @default.
• W1608726706 date "2011-08-01" @default.
• W1608726706 modified "2023-09-23" @default.
• W1608726706 title "Modeling of current mismatch induced by random dopant fluctuation in nano-MOSFETs" @default.
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• W1608726706 doi "https://doi.org/10.1088/1674-4926/32/8/084003" @default.
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