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- W1609403231 abstract "At low temperatures some ionic, covalent and mixed bonding compounds, as well as semiconducting heterostructures and quantum wells exhibit persistent photoconductivity. This term is used to describe the striking observation that the conductivity of these compounds and/or structures is greatly enhanced by visible or infrared illumination and that the low resistance state is maintained for a long time after switching off the illumination. To describe this effect in variously doped ionic-covalent semiconductors the models of repulsive barrier for both electron emission and capture were introduced based primarily on the assumption of dopant’s displacement in the host’s crystal lattice. Here we report on the magnetic counterpart of this phenomenon, which however does not exactly meet the expectations based on transport measurements. It was found that the magnetic response of AIVBVI narrow-gap semiconductors doped with CIII impurities possesses features of both relaxation phenomena and light-induced phase transition. Exposure of PbTc:Ga, PbTe:In and Pb0.75Sn0.25Te:In single crystals to white-light illumination at low temperatures resulted initially in an increase of the diamagnetic response and then in the appearance of a sharp paramagnetic peak at heating." @default.
- W1609403231 created "2016-06-24" @default.
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- W1609403231 date "2001-01-01" @default.
- W1609403231 modified "2023-09-27" @default.
- W1609403231 title "Photoinduced paramagnetism of group III impurities in A[sub IV]B[sub VI] narrow-gap semiconductors" @default.
- W1609403231 doi "https://doi.org/10.1063/1.1363095" @default.
- W1609403231 hasPublicationYear "2001" @default.
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