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• W1610074520 abstract "Nanometer scale Ge2Sb2Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180 °C show remarkable suppression in electrical and thermal conductivity. Thermal boundary resistance with increased GST-SiOx interface becomes crucial to the reduction in thermal conductivity. These conductivity reductions concurrently result in the reduction in programming current and power consumption in phase change memory devices." @default.
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• W1610074520 date "2009-06-15" @default.
• W1610074520 modified "2023-10-16" @default.
• W1610074520 title "Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices" @default.
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• W1610074520 doi "https://doi.org/10.1063/1.3155202" @default.
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