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- W1610544152 abstract "The electron mobility limited by the interface-roughness scattering in a GaAs/Al x Ga 1- x As superlattice is studied as a function of the period (the well width L W and the barrier thickness L B ) and the temperature. If the superlattice period is short and the electronic states resemble that of the 3D state, the mobility is limited by the interface-roughness scattering at low temperatures and insensitive to the temperature, in good agreement with experimental results. Using a finite potential-barrier height, it is shown that the variation of the mobility as a function of the quantum well width L W is not so steep as that of the single-quantum-well structure assuming an infinite potential-barrier height." @default.
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- W1610544152 date "1989-10-01" @default.
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- W1610544152 title "Interface-Roughness Scattering in GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As Superlattices" @default.
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- W1610544152 doi "https://doi.org/10.1143/jjap.28.1934" @default.
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