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- W1610609863 endingPage "399" @default.
- W1610609863 startingPage "339" @default.
- W1610609863 abstract "The H- Si surface is important to the electronics and photovoltaics industriesbecause Si-H is the starting point for many Si-based devices. In tum, the electronicand chemical properties of the H-terminated Si surface affect the properties ofsubsequent Si surfaces and interfaces [1-3]. Dangling or weak bonds present at thesurface will affect minority-carrier (excited-state) processes, and will thus affectdevices such as field-effect transistors and pbotovoltaics. Furthermore, the topographyof, as well as the presence of adsorbed chemical contaminants on, aH-terminated Si surface greatly affects the electronic properties of Si/SiO_x interfacesformed from this initial H-terminated Si surface [4, 5]. Organic contaminants aredifficult to remove from the Si surface, and different cleaning procedures have beenshown to result in a variety of contaminant fingerprints. Hence, significant effort hasbeen directed to understand the reactivity of the H-Si surface.This section will explore the reactivity of the H-terminated Si surface with O_2,H_2O, alcohols, metals, amines, and thiols. The synthesis, as well as the physical andelectronic characterization, of the H-Si surfaces will be reviewed briefly, but thereader is encouraged to consult Chapter 3 for a more detailed account of thepreparation and characterization of H-terminated Si surfaces." @default.
- W1610609863 created "2016-06-24" @default.
- W1610609863 creator A5015008318 @default.
- W1610609863 creator A5032584802 @default.
- W1610609863 creator A5046880202 @default.
- W1610609863 date "2012-03-16" @default.
- W1610609863 modified "2023-09-27" @default.
- W1610609863 title "Chemical Stability of Organic Monolayers Formed in Solution" @default.
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