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• W1613710528 abstract "Abstract Molecular beam epitaxy was used to grow lattice mismatched InxGa1−xSb layers on GaAs substrates. Optical and structural properties were examined by photoluminescence (PL) and transmission electron microscopy (TEM). Growth of the strained layers was found to be in layer-by-layer mode up to a critical layer thickness (CLT) where three dimensional growth and eventually dislocation generation occured. TEM revealed dislocations and stacking faults in a 2 monolayer thich InO.25Ga0.75Sb layer while a 3 monolayer thick InSb layer was defect free. The PL experiments were in general accordance with the TEM data showing an increase of critical layer thickness with increasing In-mole fraction. A reduced PL-intensity for the GaSb quantum wells is discussed in terms of indirect bandgap transitions and a staggered band line up between GaAs and GaSb." @default.
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• W1613710528 date "1992-01-01" @default.
• W1613710528 modified "2023-09-23" @default.
• W1613710528 title "quantum well structures grown by molecular beam epitaxy" @default.
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• W1613710528 doi "https://doi.org/10.1016/0749-6036(92)90278-d" @default.
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