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• W1614530557 abstract "The inherent asymmetry of the electric transport in graphene is attributed to Klein tunneling across barriers defined by $pn$ interfaces between positively and negatively charged regions. By combining conductance and shot noise experiments, we determine the main characteristics of the tunneling barrier (height and slope) in a high-quality suspended sample with Au/Cr/Au contacts. We observe an asymmetric resistance ${R}_{mathrm{odd}}=100ensuremath{-}70phantom{rule{4pt}{0ex}}mathrm{ensuremath{Omega}}$ across the Dirac point of the suspended graphene at carrier density $|{n}_{mathrm{G}}|=(0.3ensuremath{-}4)ifmmodetimeselsetexttimesfi{}{10}^{11}phantom{rule{4pt}{0ex}}{mathrm{cm}}^{ensuremath{-}2}$, while the Fano factor displays a nonmonotonic asymmetry in the range ${F}_{mathrm{odd}}ensuremath{sim}0.03$--0.1. Our findings agree with analytical calculations based on the Dirac equation with a trapezoidal barrier. Comparison between the model and the data yields the barrier height for tunneling, an estimate of the thickness of the $pn$ interface $d<20$ nm, and the contact region doping corresponding to a Fermi level offset of $ensuremath{sim}ensuremath{-}18$ meV. The strength of pinning of the Fermi level under the metallic contact is characterized in terms of the contact capacitance ${C}_{c}=19ifmmodetimeselsetexttimesfi{}{10}^{ensuremath{-}6} text{F}/{mathrm{cm}}^{2}$. Additionally, we show that the gate voltage corresponding to the Dirac point is given by the difference in work functions between the backgate material and graphene." @default.
• W1614530557 created "2016-06-24" @default.
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• W1614530557 date "2016-03-09" @default.
• W1614530557 modified "2023-10-18" @default.
• W1614530557 title "Contact doping, Klein tunneling, and asymmetry of shot noise in suspended graphene" @default.
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• W1614530557 doi "https://doi.org/10.1103/physrevb.93.115413" @default.
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