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- W1615565438 abstract "Publisher Summary This chapter discusses defects relevant for compensation in semi-insulating gallium arsenide (GaAs). The chapter is mainly concerned with donor and acceptor defects, as opposed to impurities. About five years ago, it was commonly assumed that the only defect of any importance in compensation considerations was EL2. However, with the advent of increasingly pure materials, it has become clear that even shallow defects must now be included in any realistic compensation model. Moreover, high-temperature processing, which is necessary to improve material uniformity or to make devices, can cause important modifications in the types and numbers of these shallow defects and can thus drastically affect the resistivity. Many impurity levels have been positively identified in GaAs and other semiconductors, because the presence of impurities can often be confirmed by analytical techniques. A positive identification of defects is much more difficult so that only the As antisite defect AsGa has been identified by electron paramagnetic resonance (EPR) with any degree of certainty." @default.
- W1615565438 created "2016-06-24" @default.
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- W1615565438 date "1993-01-01" @default.
- W1615565438 modified "2023-09-27" @default.
- W1615565438 title "Chapter 3 Defects Relevant for Compensation in Semi-Insulating GaAs" @default.
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- W1615565438 doi "https://doi.org/10.1016/s0080-8784(08)62799-4" @default.
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