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- W1615583444 abstract "We demonstrated that a resonant‐photon tunneling (RPT) effect for a 1.5 μm‐waveband can be observed in a GaAs/AlGaAs multi‐layered structure containing InGaSb quantum dots (QDs) and that the resonant‐incidence angle can be controlled all‐optically with a control light irradiation into the QDs active layer. These results clearly suggest the possibility of creating RPT devices for all‐optical signal processing in the optical communication wavebands." @default.
- W1615583444 created "2016-06-24" @default.
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- W1615583444 date "2005-01-01" @default.
- W1615583444 modified "2023-09-25" @default.
- W1615583444 title "Resonant-photon tunneling effect at 1.5 micron observed in GaAs/AlGaAs multi-layered structure containing InGaSb quantum dots" @default.
- W1615583444 doi "https://doi.org/10.1063/1.1994699" @default.
- W1615583444 hasPublicationYear "2005" @default.
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