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• W1616615100 abstract "Phase change memory cell based on Sn12Sb88 film shows reversible phase change abilities between high and low resistance states. We calculate the resonance character of crystalline SnSb material, which proves that SnSb is a potential phase change candidate. Sn12Sb88 is the suitable composition that has faster crystallization speed, higher crystallization temperature, and larger crystallization activation energy but lower melting point than those of Ge2Sb2Te5 material. Hence, phase change memory cell using this composition is able to show quicker set operation speed, better data retention ability, and lower reset power consumption than those of the Ge2Sb2Te5 based cell." @default.
• W1616615100 created "2016-06-24" @default.
• W1616615100 creator A5009153865 @default.
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• W1616615100 date "2009-07-20" @default.
• W1616615100 modified "2023-10-15" @default.
• W1616615100 title "Sn 12 Sb 88 material for phase change memory" @default.
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• W1616615100 doi "https://doi.org/10.1063/1.3184787" @default.
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