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• W1616749355 abstract "The authors measured soft x-ray-excited angle-resolved photoemission from Si 2p, N 1s, and O 1s core levels, and valence band for nitride films formed on Si(100), Si(111), and Si(110) using nitrogen-hydrogen radicals with the same probing depth. The Si3N4∕Si interfaces formed exhibited an almost abrupt compositional transition. Furthermore, the crystal orientation of Si substrate affects the total areal density of subnitrides but not the valence band offset at the Si3N4∕Si interface." @default.
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• W1616749355 date "2007-03-19" @default.
• W1616749355 modified "2023-10-02" @default.
• W1616749355 title "Subnitride and valence band offset at Si3N4∕Si interface formed using nitrogen-hydrogen radicals" @default.
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• W1616749355 doi "https://doi.org/10.1063/1.2715037" @default.
• W1616749355 hasPublicationYear "2007" @default.
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