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- W1617113510 abstract "The rectifying junction characteristics of methyl red (MR) organic film on n-type InP substrate have been studied. It has been observed that MR-based structure shows an excellent rectifying behavior and that the MR film increases the effective barrier height by influencing the space charge region of the n-type InP. The barrier height and ideality factor values for this structure have been obtained as 0.75 eV and 1.93 from the forward bias current-voltage characteristics, respectively. By using capacitance-voltage characteristics at 1 MHz, the barrier height and the carrier concentration values have been calculated as 0.93 eV and 5.13×1015 cm−3, respectively. The energy distributions of the interface states and their relaxation times have been determined from the forward bias capacitance-frequency and conductance-frequency characteristics. Moreover, it was seen that both the interface-state density and the relaxation time of the interface states decreased with bias voltage from experimental results." @default.
- W1617113510 created "2016-06-24" @default.
- W1617113510 creator A5062338545 @default.
- W1617113510 creator A5062422876 @default.
- W1617113510 date "2010-04-19" @default.
- W1617113510 modified "2023-10-14" @default.
- W1617113510 title "n-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties" @default.
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- W1617113510 doi "https://doi.org/10.1116/1.3377141" @default.
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