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- W1617170376 abstract "After successful demonstration of efficient p-i-n hydrogenated amorphous silicon (a-Si:H) solar cells and fully integrated panels under a MNES sponsored development project, we at NPL consciously took up the study of high rate grown a-Si:H material. This was essentially to fabricate thick p-i-n devices where thickness of the i-layer a-Si:H film is of the order of 3-4 micron. For this we developed VHF and pulse plasma techniques as also explored Helium dilution of the feed stock. Subsequently optically addressed spatial light modulator (OASLM) which is essentially a photonic device and utilises excellent photoconducting properties of a-Si:H was demonstrated working in collaboration with the NPL display group. OASLM find wide application in image amplification, crossbar switches, spatial filtering, neurocomputing etc. Prototype X-ray detectors were also developed involving thick a-Si:H p-i-n layers. This work was carried out in collaboration with IIT, Kanpur group under a BRNS (BARC) project. The equivalent noise figure of a 4 micron thick a-Si:H p-i-n device was found to be about 3500 electrons - FWHM and the response remained flat upto a bias of 45 volts and then only started increasing. This shows excellent performance of the device and IITK-BARC group enable to obtain X-ray detection using these devices." @default.
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- W1617170376 date "1998-01-01" @default.
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- W1617170376 title "An account of amorphous silicon based photonic devices development work at NPL" @default.
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