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- W161718041 abstract "Indium arsenide appears to be a promising material for creating microelectronic devices. The authors of this article maintain that the electrophysical characteristics of the InAs MOS structures have been insufficiently studied in comparison with those of the other III-V compounds and that there is practically no knowledge of photoelectric characteristics for these MOS structures. Noted is the presence of intense interaction processes of free carriers with states in the anodic oxide film (AOF) and at the AOF-InAs interface which to a substantial degree determine the form of the electrophysical and photoelectric characteristics of the structures and their behavior with a change of the measurement conditions. It is proposed that the mechanism for carrier generation and recombination in the structure is multistep Shockley-Read-Hall processes with participation of multiply charged centers." @default.
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- W161718041 date "1985-11-01" @default.
- W161718041 modified "2023-09-26" @default.
- W161718041 title "Some features of the electrophysical and photoelectric properties of MOS structures" @default.
- W161718041 hasPublicationYear "1985" @default.
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