Matches in SemOpenAlex for { <https://semopenalex.org/work/W1617379650> ?p ?o ?g. }
Showing items 1 to 79 of
79
with 100 items per page.
- W1617379650 abstract "Large-grained polycrystalline silicon thin-films on low-cost substrates are an interesting area of research for photovoltaic devices. Such devices, with grain sizes larger than the thickness of the cell, have the potential to achieve multicrystalline-like efficiencies of 15%, but at a much lower cost by taking advantage of thin-film manufacturing techniques. In this thesis, low-temperature epitaxial growth, by hot-wire (or catalytic) chemical vapor deposition, is investigated for the epitaxial thickening of large-grained polycrystalline silicon templates formed by metal-induced crystallization on low-cost substrates. Low-temperature hot-wire chemical vapor deposition allows for the deposition of epitaxial silicon with polycrystalline breakdown and with open-circuit voltages close to that of monocrystalline silicon. This is possible due to the incorporation of hydrogen into the silicon lattice, at temperatures below 350°C, for internal surface and defect passivation. In addition with hot-wire chemical vapor deposition, the critical epitaxial thickness actually increases, with a decrease in the substrate temperature down to temperatures of 270°C. Epitaxial growth of 5.5 micron thick films at 300°C and twinned epitaxial silicon growth of 6.8 micron thick films at 230°C have been achieved, along with arbitrarily thick crystalline films at low temperatures. Since epitaxial and high-quality crystalline silicon can be deposited at such low deposition temperatures, low-cost substrates, such as ordinary soda lime glass and many polymers are possible. In order to work towards achieving an epitaxially-thickened large-grained polycrystalline device, this work studies the mechanisms that lead to epitaxial growth during hot-wire chemical vapor deposition on silicon (100) substrates under various growth regimes, examines the surface evolution of crystalline thin-films grown via hot-wire chemical vapor deposition and their growth mechanisms (including the unusual rough epitaxial growth and arbitrarily thick crystalline films at low temperatures), and concludes by presenting the optical and electrical characteristics of these films and their resultant devices. This thesis demonstrates that low-temperature epitaxial silicon growth by hot-wire chemical vapor deposition is a promising material for low-cost thin-film silicon photovoltaic devices." @default.
- W1617379650 created "2016-06-24" @default.
- W1617379650 creator A5053998116 @default.
- W1617379650 date "2007-01-01" @default.
- W1617379650 modified "2023-09-27" @default.
- W1617379650 title "Low-temperature hot-wire chemical vapor deposition of epitaxial films for large-grained polycrystalline photovoltaic devices" @default.
- W1617379650 doi "https://doi.org/10.7907/gg0f-1775." @default.
- W1617379650 hasPublicationYear "2007" @default.
- W1617379650 type Work @default.
- W1617379650 sameAs 1617379650 @default.
- W1617379650 citedByCount "1" @default.
- W1617379650 countsByYear W16173796502013 @default.
- W1617379650 crossrefType "dissertation" @default.
- W1617379650 hasAuthorship W1617379650A5053998116 @default.
- W1617379650 hasConcept C110738630 @default.
- W1617379650 hasConcept C137637335 @default.
- W1617379650 hasConcept C171250308 @default.
- W1617379650 hasConcept C183866003 @default.
- W1617379650 hasConcept C19067145 @default.
- W1617379650 hasConcept C191897082 @default.
- W1617379650 hasConcept C192562407 @default.
- W1617379650 hasConcept C26953177 @default.
- W1617379650 hasConcept C2776390347 @default.
- W1617379650 hasConcept C2779227376 @default.
- W1617379650 hasConcept C2779667780 @default.
- W1617379650 hasConcept C2780565262 @default.
- W1617379650 hasConcept C33574316 @default.
- W1617379650 hasConcept C49040817 @default.
- W1617379650 hasConcept C544956773 @default.
- W1617379650 hasConcept C57410435 @default.
- W1617379650 hasConcept C75937256 @default.
- W1617379650 hasConcept C80086925 @default.
- W1617379650 hasConcept C87359718 @default.
- W1617379650 hasConceptScore W1617379650C110738630 @default.
- W1617379650 hasConceptScore W1617379650C137637335 @default.
- W1617379650 hasConceptScore W1617379650C171250308 @default.
- W1617379650 hasConceptScore W1617379650C183866003 @default.
- W1617379650 hasConceptScore W1617379650C19067145 @default.
- W1617379650 hasConceptScore W1617379650C191897082 @default.
- W1617379650 hasConceptScore W1617379650C192562407 @default.
- W1617379650 hasConceptScore W1617379650C26953177 @default.
- W1617379650 hasConceptScore W1617379650C2776390347 @default.
- W1617379650 hasConceptScore W1617379650C2779227376 @default.
- W1617379650 hasConceptScore W1617379650C2779667780 @default.
- W1617379650 hasConceptScore W1617379650C2780565262 @default.
- W1617379650 hasConceptScore W1617379650C33574316 @default.
- W1617379650 hasConceptScore W1617379650C49040817 @default.
- W1617379650 hasConceptScore W1617379650C544956773 @default.
- W1617379650 hasConceptScore W1617379650C57410435 @default.
- W1617379650 hasConceptScore W1617379650C75937256 @default.
- W1617379650 hasConceptScore W1617379650C80086925 @default.
- W1617379650 hasConceptScore W1617379650C87359718 @default.
- W1617379650 hasLocation W16173796501 @default.
- W1617379650 hasOpenAccess W1617379650 @default.
- W1617379650 hasPrimaryLocation W16173796501 @default.
- W1617379650 hasRelatedWork W1853907375 @default.
- W1617379650 hasRelatedWork W1966746206 @default.
- W1617379650 hasRelatedWork W1973409867 @default.
- W1617379650 hasRelatedWork W1974888556 @default.
- W1617379650 hasRelatedWork W1977726569 @default.
- W1617379650 hasRelatedWork W1981086673 @default.
- W1617379650 hasRelatedWork W1987511538 @default.
- W1617379650 hasRelatedWork W1995122482 @default.
- W1617379650 hasRelatedWork W2017035144 @default.
- W1617379650 hasRelatedWork W2021282480 @default.
- W1617379650 hasRelatedWork W2095952457 @default.
- W1617379650 hasRelatedWork W2106328973 @default.
- W1617379650 hasRelatedWork W2129348629 @default.
- W1617379650 hasRelatedWork W2139087403 @default.
- W1617379650 hasRelatedWork W2148244558 @default.
- W1617379650 hasRelatedWork W2155007213 @default.
- W1617379650 hasRelatedWork W2162317974 @default.
- W1617379650 hasRelatedWork W2171248239 @default.
- W1617379650 hasRelatedWork W2319869563 @default.
- W1617379650 hasRelatedWork W643542034 @default.
- W1617379650 isParatext "false" @default.
- W1617379650 isRetracted "false" @default.
- W1617379650 magId "1617379650" @default.
- W1617379650 workType "dissertation" @default.