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• W1617480564 abstract "We report on the growth and characterization of SrRuO3 single layers and SrRuO3/SrTiO3/SrRuO3 heterostructures grown on SrTiO3(100) substrates. The thickness dependence of the coercivity was determined for these single layers. Heterostructures with barrier thickness tb=1, 2.5, and 4 nm were fabricated, with electrodes having thickness ranging from 10 to 100 nm. The hysteresis loops of heterostructures with tb=2.5 nm, 4 nm reveal uncoupled magnetic switching of the electrodes. Therefore, these heterostructures can be used for the fabrication of magnetic tunneling junctions." @default.
• W1617480564 created "2016-06-24" @default.
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• W1617480564 date "2003-05-15" @default.
• W1617480564 modified "2023-09-26" @default.
• W1617480564 title "SrRuO3/SrTiO3/SrRuO3 heterostructures for magnetic tunnel junctions" @default.
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• W1617480564 doi "https://doi.org/10.1063/1.1555372" @default.
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