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- W1618396917 abstract "Bi films perforated with a nano-honeycomb (NHC) array of hole s. The period of the magneto-resistance, H = HM = h/2eS where S is the area of a unit cell of holes, indicates the field driven t ransitions are boson dominated. The field-dependent resistance follows R(T ) = R0(H)e T0(H)/T on both sides of the transition so that the evolution between these states is controlled by t he vanishing of T0 ! 0. We compare our results to the thickness driven transition in NHC films and the field dr iven transitions in unpatterned Bi films, other materials, and Josephson junction arrays. Our results suggest a structural source for similar behavior found in some materials and that despite the clear bosonic nature of the SITs, quasiparticle degrees of freedom likely also play an important part in the evolution of the SIT. Quasi two-dimensional electronic systems exhibit a wide range of phenomena including the quantum Hall effect [1], weak and strong localization [2], and metal-insulator tran sitions [3] including the superconductor to insulator transi tion (SIT) [4, 5, 6]. These result from the enhancement of disorder, coulomb repulsion, and fluctuation effects on localization and superconductivity brought on by the reduced dimensionality. The aspects of these phenomena that are universal, or independent of the material comprising the systems, such as the exact quantization of the resistance plateaus in the quantum hall effect [1] and the logarithmic decrease in the conductance of metal films with temperature [3], have made them particularl y" @default.
- W1618396917 created "2016-06-24" @default.
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- W1618396917 date "2007-12-07" @default.
- W1618396917 modified "2023-09-27" @default.
- W1618396917 title "Field Tuned Superconductor to Insulator Transitions in an Amorphous Film with an Imposed Multiply Connected Geometry" @default.
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