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• W1618451431 abstract "<para xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> The operation of long- and short-channel enhancement-mode <formula formulatype=inline> <tex>$hbox{In}_{0.7} hbox{Ga}_{0.3}hbox{As}$</tex></formula>-channel MOSFETs with high-<formula formulatype=inline><tex>$kappa$</tex></formula> gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 <formula formulatype=inline> <tex>$muhbox{m}$</tex></formula>, the long-channel devices have <formula formulatype=inline><tex>$V_{t} = + hbox{0.25} hbox{V}$</tex></formula>, a subthreshold slope of 150 mV/dec, an equivalent oxide thickness of 4.4 <formula formulatype=inline><tex>$+/-$</tex></formula> 0.3 nm, and a peak effective mobility of 1100 <formula formulatype=inline><tex>$hbox{cm}^{2}/hbox{V} cdot hbox{s}$</tex></formula>. For a gate length of 260 nm, the short-channel devices have <formula formulatype=inline><tex>$V_{t} = + hbox{0.5} hbox{V}$</tex> </formula> and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage. </para>" @default.
• W1618451431 created "2016-06-24" @default.
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• W1618451431 date "2007-06-01" @default.
• W1618451431 modified "2023-10-01" @default.
• W1618451431 title "Enhancement-Mode Buried-Channel $hbox{In}_{0.7} hbox{Ga}_{0.3}hbox{As/In}_{0.52}hbox{Al}_{0.48}hbox{As}$ MOSFETs With High- $kappa$ Gate Dielectrics" @default.
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• W1618451431 doi "https://doi.org/10.1109/led.2007.896813" @default.
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