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- W1618744805 abstract "Taking advantage of plasma excitation, surface cleaning and growth process are realized at low temperatures by electron‐cyclotron‐resonance (ECR) plasma‐excited molecular‐beam‐epitaxy (MBE). Prior to growth, substrates are cleaned by exposure to hydrogen plasma at temperatures ranging from 300 to 550°C. Arsine gas is introduced and cracked in an ECR plasma generation chamber. Gallium is supplied either as trimethylgallium (TMG) or as metallic Ga. Epitaxial films are successfully grown at substrate temperatures low as 430°C for the TMG‐arsine system and 350°C for the metallic Ga‐arsine system. The growth rate for the TMG‐arsine system is found to be governed by a balance between TMG decomposition and surface atom desorption. By contrast, the metallic Ga‐arsine system is only governed by the desorption process. Exposure to plasma is found to promote desorption of atoms migrating on the substrate surface. The interface between the substrate and the epitaxial layer produced by the ECR‐MBE process is found to be clean without piling up of impurity." @default.
- W1618744805 created "2016-06-24" @default.
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- W1618744805 date "1988-01-01" @default.
- W1618744805 modified "2023-10-16" @default.
- W1618744805 title "A low-temperature growth process of GaAs by electron-cyclotron-resonance plasma-excited molecular-beam-epitaxy (ECR-MBE)" @default.
- W1618744805 doi "https://doi.org/10.1063/1.37162" @default.
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