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- W1621150900 abstract "Abstract : The growth condition for fabricating 1.5 micron lasers using LPE techniques has been established. High power performance and external quantum efficiency of the laser are studied. Keywords include: Semiconductor lasers, GAInAsP/InP, 1.5 microns." @default.
- W1621150900 created "2016-06-24" @default.
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- W1621150900 date "1985-03-04" @default.
- W1621150900 modified "2023-09-23" @default.
- W1621150900 title "1.5 Micrometer GaInAsP High Pulsed Power Diode Lasers." @default.
- W1621150900 doi "https://doi.org/10.21236/ada153568" @default.
- W1621150900 hasPublicationYear "1985" @default.
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