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• W1621178185 abstract "With Bi3TiNbO9 (BTN) ferroelectric samples, in situ electrical-field-induced growth of ferroelectric thin films was demonstrated to control the films’ microstructure and manipulate their ferroelectric properties. BTN films on Ti/SiO2/Si substrates were grown at a relatively low temperature (650 °C) with a biased electrical field during pulsed-laser deposition. The (001) orientation of the films, which makes no contribution to their polarization, was effectively reduced by the in situ electrical field of strength of 70 V/cm. This results in a large increase of remnant polarization from 1.1 to 6.2 μC/cm2, and reduction of the coercive field from 70 to 50 kV/cm, comparing the films grown freely under the same condition. Furthermore, the films showed an excellent fatigue-free property of up to 1010 switching cycles." @default.
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• W1621178185 date "2001-12-31" @default.
• W1621178185 modified "2023-10-15" @default.
• W1621178185 title "<i>In situ</i> electrical-field-induced growth and properties of Bi3TiNbO9 ferroelectric thin films" @default.
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• W1621178185 doi "https://doi.org/10.1063/1.1430023" @default.
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