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• W1622113130 abstract "Phase change memory cells were fabricated using plasma-enhanced cyclic chemical-vapor-deposited (GST) thin films deposited on diameter contact plugs formed in a layer. A 2, 4, and thick atomic deposited layer was interposed between the GST and underlayer containing the contact plug. The necessary reset current and power decreased with increasing the interlayer thickness. Adoption of the optimum thickness layer decreased the necessary reset power to of the cell without the layer. This was attributed mainly to the effective heat insulation by the thick layer. The structural investigation and electrothermal simulation results for the fabricated cells showed a good match between the electrical performance and phase changed volume, which can explain the improvement in switching parameters of the proper layer interposed cell." @default.
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• W1622113130 date "2009-01-01" @default.
• W1622113130 modified "2023-10-16" @default.
• W1622113130 title "Switching Power Reduction in Phase Change Memory Cell Using CVD Ge[sub 2]Sb[sub 2]Te[sub 5] and Ultrathin TiO[sub 2] Films" @default.
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• W1622113130 doi "https://doi.org/10.1149/1.3008013" @default.
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