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- W1624524115 abstract "Formation of the nanoislands and nanostrips in the 350–500°C temperature range was studied by scanning tunneling microscopy before completion of the wetting layer in Ge/Si(111) system. It has been shown that the mechanism of the formation of the wetting layer depends on the rate of Ge deposition. At low deposition rates of the order of 10−3 BL/min the formation of the wetting layer proceeds by multilayer growth mechanism. Therefore the arrays of Ge islands with the densities of 109 – 1012 cm−2 appear directly on Si surface at this stage of the growth. The height of the Ge islands is limited by 3 belayers. A series of lines related to the quantization of the phonon spectrum along the growth direction was observed in the spectra of Raman scattering from the Ge nanoislands. Initial stages of the Ge growth on the vicinal surfaces Si(111) was studied. Shown differences of the Ge growth along of the steps edges when steps are perpendicular to [112] and [112] directions. Shown possibility of formation the fla..." @default.
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- W1624524115 date "2003-01-01" @default.
- W1624524115 modified "2023-10-14" @default.
- W1624524115 title "STM Studies of Self-Organization of Ge Nanoislands and Nanostrips before Formation Wetting Layer on Si(111) Surfaces" @default.
- W1624524115 doi "https://doi.org/10.1063/1.1639782" @default.
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