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• W1626436623 abstract "The planarization of the SiGe virtual substrate surface is crucial for the fabrication of high-performance strained-Si metal-oxide-semiconductor field-effect transistors. In this letter, we report on the smoothing of the inherently crosshatched rough surfaces of SiGe deposited by molecular beam epitaxy on Si substrates by gas cluster ion beams. Atomic force microscopy measurements show that the average surface roughness (Ra) of the SiGe layer could be reduced considerably from 3.2 to 0.7 nm without any crosshatched pattern. Rutherford backscattering in combination with channeling was used to study the damage produced by cluster bombardment. No visible surface damage was observed for the normal-incidence smoothed SiGe with postsmoothing glancing angle cluster ion beam etching." @default.
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• W1626436623 date "2005-08-30" @default.
• W1626436623 modified "2023-09-27" @default.
• W1626436623 title "Smoothing of Si0.7Ge0.3 virtual substrates by gas-cluster-ion beam" @default.
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• W1626436623 doi "https://doi.org/10.1063/1.2041829" @default.
• W1626436623 hasPublicationYear "2005" @default.
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