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- W1627408092 abstract "It has been shown that the band gap energy of dilute nitride ternary alloys (Ga1−yInyNxAs1−x in this case) can be predicted by knowing the band gap energy for dilute nitride binary alloys (GaNxAs1−x and InNxAs1−x alloys in this case) and a bowing parameter. The band gap energy for GaNxAs1−x and InNxAs1−x can be calculated after the band anticrossing (BAC) model [W. Shan et al., Phys. Rev. Lett. 82, 1221 (1999)] or other formula, whereas the bowing parameter can be assumed to be the same as for the GaInAs alloy. This approach does not require the BAC parameters related to Ga1−yInyNxAs1−x and can be applied for other dilute nitride ternary alloys. The obtained band gap predictions are in good agreement with available experimental data for as-grown GaInNAs materials. It means that the proposed energy gap parametrization corresponds to the random environment of N atoms by Ga and In atoms since alloying of GaNxAs1−x with InNxAs1−x also corresponds to alloying of Ga-rich environment of N atoms (which is expected for the as-grown GaInNAs material with low indium content) with In-rich environment of N atoms (which is expected for the as-grown GaInNAs material with high indium content)." @default.
- W1627408092 created "2016-06-24" @default.
- W1627408092 creator A5014458382 @default.
- W1627408092 date "2007-01-15" @default.
- W1627408092 modified "2023-09-26" @default.
- W1627408092 title "Alloying of GaNxAs1−x with InNxAs1−x: A simple formula for the band gap parametrization of Ga1−yInyNxAs1−x alloys" @default.
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- W1627408092 doi "https://doi.org/10.1063/1.2424528" @default.
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