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- W1629576 abstract "In this study, the authors proposed a formation mechanism of Ge nanocrystals (NCs) embedded in the dielectric by using Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1.33</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.67</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2.67</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1.33</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films for nonvolatile memory (NVM) application. Because of internal competition reaction, this formation process reduced the thermal budget and eliminated the use of high-pressure H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> treatment or steam process. The metal/oxide/insulator/oxide/silicon capacitor structure with NCs was also studied, and exhibited hysteresis characteristics after electrical operation. Transmission electron microscopy clearly shows the shape and density of NCs in the dielectric. In addition, the obvious memory window can be used to define ldquo1rdquo and ldquo0rdquo states at low-voltage program operation. Furthermore, good endurance and retention characteristics are exhibited for the Ge NCs embedded in SiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> structure. Besides, this technology is suitable for the current NVM fabrication and low-power device application." @default.
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- W1629576 date "2009-03-01" @default.
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- W1629576 title "Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of $hbox{Si}_{{bf 1.33}} hbox{Ge}_{{bf 0.67}} hbox{O}_{bf 2}$ and $hbox{Si}_{{bf 2.67}} hbox{Ge}_{{bf 1.33}} hbox{N}_{bf 2}$ Layers" @default.
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- W1629576 doi "https://doi.org/10.1109/tnano.2008.2005728" @default.
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