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- W1630607693 abstract "InAlAs/InGaAs Heterostructure Field-Effect Transistors (HFET) exhibit excellent DC- and RF- performance and are well suited for low power applications in the millimeter-wavelength range. Using sophisticated crystal growth modes and device fabrication techniques, the capability of high power applications was also demonstrated. But with increasing drain-source voltages V/sub ds/>3 V it new parasitic phenomenon can be detected additive to the well-known gate leakage mechanism. An exponentially growing gate current bump, strongly dependent on the HFET design, appears at positive gate-source voltages V/sub gs/." @default.
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- W1630607693 date "2002-12-23" @default.
- W1630607693 modified "2023-09-26" @default.
- W1630607693 title "Characterization and analysis of a new gate leakage mechanism at high drain bias in InAlAs/InGaAs heterostructure field-effect transistors" @default.
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- W1630607693 doi "https://doi.org/10.1109/iciprm.1996.492333" @default.
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