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- W1637223301 abstract "Abstract : This report summarizes a detailed study of ZnSe and ZnSxSe1-x epitaxial growth on germanium and gallium arsenide substrates, for application in surface passivation and heterojunction devices. These layers were prepared by a novel low pressure, low temperature organometallic chemical vapor deposition (OM-CVD) process. Both nominally undoped, intrinsic ZnSe and Al-doped, highly conductive n-type ZnSe were prepared by this method. Excellent epitaxial growth was achieved as indicated by the large intensity in the near bandgap photoluminescence and the rather weak intensity in the self-activated luminescence spectra. This indicates a low concentration of intrinsic and extrinsic defects and a low compensation ratio. An important relationship was observed between reproducibility of layer characteristics and substrate and reactor preparation. Also, deep center luminescence revealed that ZnSe layers deposited on both GaAs and Ge (100) surfaces have luminescence properties superior to those deposited on other substrate orientations. This study revealed a large disparity in the electrical conductivity depending on substrate orientation, of Al-doped, n-type ZnSe layers deposited both on GaAs and Ge Substrates. The defect structure of ZnSe layers grown on (100), (110), and (111)b GaAs, and on (100) and (111) Ge substrates were imaged for the first time by high resolution transmission electron microscopy. ZeSe-Ge heterojunctions were successfully fabricated and reflect the orientation dependent of interface properties and layer resistivity in their current - voltage characteristics." @default.
- W1637223301 created "2016-06-24" @default.
- W1637223301 creator A5010835724 @default.
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- W1637223301 date "1984-08-01" @default.
- W1637223301 modified "2023-09-27" @default.
- W1637223301 title "Preparation and Evaluation of ZnSe and ZnS sub X Se sub 1-X Epitaxial Layers on Ge Substrates for Applications in Surface Passivation and Heterojunction Devices." @default.
- W1637223301 hasPublicationYear "1984" @default.
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