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- W1637640000 abstract "B+ ion implantation technology has been utilized to fabricate n+ on P HgCdTe photovoltaic arrays with the HgCdTe epitaxial materials grown by the liquid phase epitaxial method. The effects of implanting energy and dose on doping profile and approximate junction depth were calculated in detail; the calculated results are well consistent with the measurement results by the second ion mass spectrum experimental technique (SIMS). The 10×10 photodiode arrays in which each pixel size is nominally 20×20 μm2 and the pitch is 30 μm were made to investigate the electro‐optic performance of devices. The device characterization such as array uniformity and optical crosstalk was nondestructively investigated using a scanning laser microscope. The two‐dimensional maps of laser beam induced current (LBIC) signal have shown good uniformity for the fabricated arrays, and there is no optical crosstalk between the arrays for the B+ ion implantation conditions used at the implanting energy of 130 KeV and the dose of 2×1014 cm2. The primary performance of photodiodes the zero bias dynamic resistance junction area product R0A, infrared response spectrum, and the detectivity D* have been measured, and the typical values for the test photodiodes with cutoff wavelength of 9.2 μm measured at 77°K are: R0A = 13.5′Ω⋅cm2, average blackbody detectivity D* = 7.18×1010 cm Hz1/2W−1. By further optimizing the implantation conditions and the quality of materials, excellent performances of photovoltaic detectors can be expected." @default.
- W1637640000 created "2016-06-24" @default.
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- W1637640000 date "2005-01-01" @default.
- W1637640000 modified "2023-09-24" @default.
- W1637640000 title "B+ Ion Implanted n+ on P HgCdTe Photovoltaic Arrays" @default.
- W1637640000 doi "https://doi.org/10.1063/1.2128363" @default.
- W1637640000 hasPublicationYear "2005" @default.
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