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- W1638764069 abstract "Abstract : Our results indicate that excellent passivation of SiNx/GaAs and SiNx/InP interfaces can be achieved using both liquid and gaseous sulfur treatments of the surface. It is important to note that the S-treated surfaces are stable in the presence of an 'soft' ECR plasma and are amenable to the environment of SiNx growth. Annealing appears to be a crucial step in achieving lower defect densities at the SiNx/III-V interfaces. A significant reduction in the interfacial defect density leads to unpinning of the Fermi-level at the interfaces. This permits fabrication of superior metal-semiconductor (both Schottky and ohmic) junctions and metal-insulator-semiconductor FETs. Furthermore, reduction of defects at the interface also reduces the surface recombination velocity, thus improving the performance of minority carrier based devices. We have demonstrated that such is indeed the case by passivating AlGaAs/GaAs based heterojunction bipolar transistors and surface-emitting lasers." @default.
- W1638764069 created "2016-06-24" @default.
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- W1638764069 date "1993-11-29" @default.
- W1638764069 modified "2023-09-27" @default.
- W1638764069 title "Passivation of III-V Compound Semiconductor Based Devices" @default.
- W1638764069 hasPublicationYear "1993" @default.
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