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- W1639773326 abstract "This chapter discusses the fracture of silicon and other semiconductors. There has long been a practical interest in identifying the conditions under which semiconductor materials fracture. The thrust of this work has been largely empirical and restricted to discovering the maximum conditions under which the fracture can be avoided. While the physics of fracture is peripheral to the majority interested in devices, an understanding of the mechanisms of fracture is nevertheless important in designing device structures and semiconductor processing. Thus, at low temperatures, below the brittle-to-ductile transition (BDT), stresses introduced by fabrication, processing, and handling can only be relieved by creep deformation, by atomic migration in the metallurgical features, or by fracture of the semiconductor itself. At high temperatures, such fractures probably will not occur, but the stresses may well be relieved by the generation of dislocations in the semiconductors and subsequent plastic flow at sites, such as at steps or trenches, where the stress gradients are particularly high." @default.
- W1639773326 created "2016-06-24" @default.
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- W1639773326 date "1992-01-01" @default.
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- W1639773326 title "Chapter 2 Fracture of Silicon and Other Semiconductors" @default.
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- W1639773326 doi "https://doi.org/10.1016/s0080-8784(08)62514-4" @default.
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