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- W1640280507 abstract "A comparison is made of the dry etching characteristics of , , and in or discharges excited by combined electron cyclotron resonance and radio frequency (RF) power. For a given set of conditions the etching is approximately 50% faster than with plasmas. Similarly, the addition of 150 W of microwave power to a given RF discharge enhances the etch rates of all three semiconductors by about a factor of two. The etch rates increase linearly with both RF and microwave power level, and smooth surface morphologies are obtained for microwave powers of 200 W or less. Above this power level, all three materials show roughened surfaces. The etched surfaces show slightly higher carbon concentrations than control sections. The use of as a replacement for either methane or ethane has no advantage in terms of enhancing the etch rates. Damage introduction depths up to 1000 Å are measured for high bias hydrogen or argon discharges by using multiquantum well structures as a probe of the presence of optically active defects." @default.
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- W1640280507 date "1991-05-01" @default.
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- W1640280507 title "Dry Etching of GaAs , AlGaAs , and GaSb Using Electron Cyclotron Resonance and Radio Frequency CH 4 / H 2 / Ar or C 2 H 6 / H 2 / Ar Discharges" @default.
- W1640280507 doi "https://doi.org/10.1149/1.2085802" @default.
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