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- W1640525984 abstract "We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Ttau >1. Our comparison does not involve any fitting parameters." @default.
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- W1640525984 date "2004-01-05" @default.
- W1640525984 modified "2023-09-27" @default.
- W1640525984 title "Reply to Comment (cond-mat/0311174)" @default.
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