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• W1640659529 abstract "Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films with PbZrO3 (PZ) buffer layers were prepared on Pt(111)∕Ti∕SiO2∕Si(100) substrates using a hybrid rf magnetron sputtering and sol-gel process. Texture of PZT films was found to depend on Pb content of PZ buffer layers. Buffered PZT films displayed comparable ferroelectric properties (2Pr=38–53μC∕cm2,2Ec=136–170kV∕cm) with unbuffered PZT. Asymmetric leakage current and fatigue behavior with superior fatigue resistance was observed in PZ buffered PZT compared to unbuffered films. PZ buffer layers were found to affect crystallization and texture of PZT, and act as a capacitive interface layer possibly blocking charge injection from electrodes." @default.
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• W1640659529 date "2006-05-15" @default.
• W1640659529 modified "2023-10-18" @default.
• W1640659529 title "Improving fatigue resistance of Pb(Zr,Ti)O3 thin films by using PbZrO3 buffer layers" @default.
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• W1640659529 doi "https://doi.org/10.1063/1.2195116" @default.
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